Physics and Applications of CVD DiamondSatoshi Koizumi, Christoph Nebel, Milos Nesladek John Wiley & Sons, 13 d’oct. 2008 - 374 pàgines Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs. Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is essential reading for everyone working in environments that involve conventional electronics, biotechnology, quantum computing, quantum cryptography, superconductivity and light emission from highly excited excitonic systems. |
Continguts
Growth and Properties of Nanocrystalline Diamond Films | 13 |
Chemical Vapor Deposition of Homoepitaxial Diamond Films | 29 |
Physics and Applications of CVD Diamond Satoshi Koizumi Christoph Nebel and Milos Nesladek | 77 |
Electrochemical Properties of Undoped Diamond | 93 |
555 | 121 |
7 | 171 |
1 | 177 |
Theoretical Models for Doping Diamond for Semiconductor | 199 |
Altres edicions - Mostra-ho tot
Physics and Applications of CVD Diamond Satoshi Koizumi,Christoph Nebel,Milos Nesladek Previsualització limitada - 2008 |
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acceptor acoustic Applied Physics Letters atoms band gap beam bonding boron boron-doped calculated carbon chemical potential chemical vapor deposition cm² cm³ conductivity CVD diamond cyclic voltammetry density deposition detected detectors devices Diamond and Related diamond films diamond growth diamond surface donor level dopants doping electrochemical electrolyte electron excited exciton fluorescence frequency function grown growth rate H-terminated diamond Hall mobility heteroepitaxy high-power MPCVD hole homoepitaxial diamond homoepitaxial film hydrogen hydrogen-terminated impurity increasing Journal of Applied Koizumi lattice layer measured mechanism metal methane concentration microwave molecules Nebel nitrogen nucleation NV center Okushi optical oxidized P-doped parameters phonon physica status solidi piezoelectric plasma properties quantum qubits redox Related Materials resonance sample Schematic Schottky semiconductor sensors shown in Figure shows silicon solid spectra spin structure substrate substrate temperature superconductivity TFAAD thickness tion typical UNCD undoped valence band