Power MOSFETs: Theory and ApplicationsWiley, 25 d’abr. 1989 - 528 pàgines Details the theory of power MOSFETs and their applications. Explains the basis of MOSFET characteristics, and the features that determine MOSFET behavior. Examines the interaction of the MOSFET device with other elements in the circuit, and how device characteristics influence circuit design. Describes several circuits at length to highlight the practical details of power MOSFET use. |
Continguts
Preface | 1 |
THRESHOLD VOLTAGE | 25 |
STATIC CHARACTERISTICS | 53 |
Copyright | |
No s’hi han mostrat 39 seccions
Frases i termes més freqüents
amplifier applications avalanche bias bipolar transistor body-drain diode capability capacitance cascode cells channel characteristics charge clamp components Conf current waveform current-sensing MOSFET depletion layer di/dt diode recovery current dissipation doping drain current drain voltage drive circuit effect epitaxial Equation failure forward voltage drop gate drive gate oxide gate voltage HEXFET high-voltage IEEE IEEE Trans IGBT increase inductance input integrated circuits International Rectifier inversion layer inverter junction temperature latchup linear load current maximum modulation motor n-channel MOSFET normal obtained operation output p-type package parasitic potential Power Convers Power Electron power MOSFET power supplies Powercon Proc pulse radiation RDS(on Rectifier reduced region resistance resistor resonant semiconductor sense ratio shown in Figure silicon snubber surface switching frequency synchronous rectifier T₁ thermal threshold voltage thyristor transconductance turn-on turnoff typical voltage rating waveform zener
Referències a aquest llibre
Halbleiter-Leistungsbauelemente: Physik, Eigenschaften, Zuverlässigkeit Josef Lutz Previsualització limitada - 2006 |
Encyclopedia of Applied Physics, Volum 22 George L. Trigg,Eduardo S. Vera,Walter Greulich Visualització de fragments - 1998 |