Spin-polarized Currents for Spintronic Devices: Point-contact Andreev Reflection and Spin FiltersCuvillier Verlag, 2007 - 121 pàgines |
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Spin-Polarized Currents for Spintronic Devices: Point-Contact Andreev ... Sebastian von Oehsen Previsualització no disponible - 2007 |
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2DES Andreev reflection ballistic model bias voltage BTK model channel co-evaporated conductance steps confinement Cooper pair corrected and normalized curves decreases dependence dGmeas diffusive model energy gap etched experimental Fermi energy ferromagnetic Figure fits GaAs gap parameter gate voltage Hall bar Heusler alloys InAs heterostructure InAs side gates interface investigated junction layer Lett lithography magnetic field martensitic material Meier Merkt metal micrograph normal conductor normalization resistance obtained Oehsen optical orientation oxide PCAR measurements photoemission photoemission spectroscopy Phys prepared proximity effect proximity model QPCs quantum point contacts semiconductor series resistance setup shown in Fig shows specific resistivity spectroscopy spin coat spin filter spin injection spin polarization spin transistor spin-down electrons spin-filter spin-orbit interaction spin-polarized currents spin-splitting spin-up and spin-down spintronic split gates subbands substrate superconductor technique temperature theoretical thickness thin films transport unpolarized values voltage Vfg wafer width Y-shaped
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